Scanning photoelectron microscope for nanoscale three-dimensional spatial-resolved electron spectroscopy for chemical analysis.

نویسندگان

  • K Horiba
  • Y Nakamura
  • N Nagamura
  • S Toyoda
  • H Kumigashira
  • M Oshima
  • K Amemiya
  • Y Senba
  • H Ohashi
چکیده

In order to achieve nondestructive observation of the three-dimensional spatially resolved electronic structure of solids, we have developed a scanning photoelectron microscope system with the capability of depth profiling in electron spectroscopy for chemical analysis (ESCA). We call this system 3D nano-ESCA. For focusing the x-ray, a Fresnel zone plate with a diameter of 200 μm and an outermost zone width of 35 nm is used. In order to obtain the angular dependence of the photoelectron spectra for the depth-profile analysis without rotating the sample, we adopted a modified VG Scienta R3000 analyzer with an acceptance angle of 60° as a high-resolution angle-resolved electron spectrometer. The system has been installed at the University-of-Tokyo Materials Science Outstation beamline, BL07LSU, at SPring-8. From the results of the line-scan profiles of the poly-Si/high-k gate patterns, we achieved a total spatial resolution better than 70 nm. The capability of our system for pinpoint depth-profile analysis and high-resolution chemical state analysis is demonstrated.

برای دانلود رایگان متن کامل این مقاله و بیش از 32 میلیون مقاله دیگر ابتدا ثبت نام کنید

ثبت نام

اگر عضو سایت هستید لطفا وارد حساب کاربری خود شوید

منابع مشابه

Studies on the annealing and antibacterial properties of the silver-embedded aluminum/silica nanospheres

Substantial silver-embedded aluminum/silica nanospheres with uniform diameter and morphology were successfully synthesized by sol-gel technique. After various annealing temperatures, the surface mechanisms of each sample were analyzed using scanning electron microscope, transmission electron microscope, and X-ray photoelectron spectroscopy. The chemical durability examinations and antibacterial...

متن کامل

Three-Dimensional Nanoscale Mapping of State-of-the-Art Field-Effect Transistors (FinFETs).

The semiconductor industry has seen tremendous progress over the last few decades with continuous reduction in transistor size to improve device performance. Miniaturization of devices has led to changes in the dopants and dielectric layers incorporated. As the gradual shift from two-dimensional metal-oxide semiconductor field-effect transistor to three-dimensional (3D) field-effect transistors...

متن کامل

Silver patterning using an atomic force microscope tip and laser-induced chemical deposition from liquids

Related Articles Benefits of plasma treatments on critical dimension control and line width roughness transfer during gate patterning J. Vac. Sci. Technol. B 31, 012205 (2013) The Si3N4/TiN Interface: 5. TiN/Si3N4 Grown and Analyzed In situ using Angle-resolved X-ray Photoelectron Spectroscopy Surf. Sci. Spectra 19, 72 (2012) Negative electron-beam resist hard mask ion beam etching process for ...

متن کامل

Correlative electron and X-ray microscopy: probing chemistry and bonding with high spatial resolution.

Two powerful and complementary techniques for chemical characterisation of nanoscale systems are electron energy-loss spectroscopy in the scanning transmission electron microscope, and X-ray absorption spectroscopy in the scanning transmission X-ray microscope. A correlative approach to spectro-microscopy may not only bridge the gaps in spatial and spectral resolution which exist between the tw...

متن کامل

Li-rich Thin Film Cathode Prepared by Pulsed Laser Deposition

Li-rich layer-structured cathode thin films are prepared by pulsed laser deposition. X-ray diffraction (XRD), field emission scanning electron microscope (FESEM), X-ray photoelectron spectroscopy (XPS) and electrochemical testing in half battery cells are used to characterize crystal structure, surface morphology, chemical valence states and electrochemical performance of these thin films, resp...

متن کامل

ذخیره در منابع من


  با ذخیره ی این منبع در منابع من، دسترسی به آن را برای استفاده های بعدی آسان تر کنید

عنوان ژورنال:
  • The Review of scientific instruments

دوره 82 11  شماره 

صفحات  -

تاریخ انتشار 2011